The title name of United States Patent “US 7889541″ is 2T SRAM cell structure, but it is not a true SRAM cell, it can be called a kind of Pseudo-SRAM.
The title name faked a kind of SRAM to cheat us there is a new SRAM cell of 2T. In fact, there are no any true 2T SRAM cell can be realized now, but probably can realize 3T SRAM on standard CMOS process.
Kurjoy
2012.5.4
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